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Datasheet File OCR Text: |
savantic semiconductor product specification silicon pnp power transistors 2SA1383 d escription with to-220 package complement to type 2sc3514 high transition frequency applications designed for use in audio frequency power amplifier applications pinning pin description 1 emitter 2 collector;connected to mounting base 3 base absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector- base voltage open emitter -180 v v ceo collector- emitter voltage open base -180 v v ebo emitter-base voltage open collector -5 v i c collector current -0.1 a t a =25 1.5 p c collector power dissipation t c =25 10 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (to-220) and symbol
savantic semiconductor product specification 2 silicon pnp power transistors 2SA1383 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =-10ma ,i b =0 -180 v v cesat collector-emitter saturation voltage i c =-50ma; i b =-5ma -0.5 v v besat base-emitter saturation voltage i c =-50ma; i b =-5ma -1.5 v i cbo collector cut-off current v cb =-180v; i e =0 -1.0 a i ebo emitter cut-off current v eb =-3v; i c =0 -1.0 a h fe-1 dc current gain i c =-1ma ; v ce =-5v 90 h fe-2 dc current gain i c =-10ma ; v ce =-5v 100 320 c ob output capacitance i e =0 ; v cb =-10v;f=1mhz 4.5 pf f t transition frequency i c =-20ma ; v ce =-10v 180 mhz h fe-2 classifications q p 100-200 160-320 savantic semiconductor product specification 3 silicon pnp power transistors 2SA1383 package outline fig.2 outline dimensions(unindicated tolerance: 0.10 mm) |
Price & Availability of 2SA1383 |
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